K30N60HS pdf, K30N60HS Description, K30N60HS Datasheet,
Part #: K30N60HS. Description: HIGH SPEED IGBT IN NPT-TECHNOLOGY. File Size: 435.61 Kbytes. Manufacturer: Infineon Technologies AG.
Related Topics:
K30n60 Production Inverter
K30N60HS Datasheet PDF
SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for
SKW30N60
75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for: Motor controls Inverter NPT-Technology for 600V applications
K30N60 Infineon Technologies – Price, Stock & Datasheet
The K30N60, manufactured by Infineon Technologies, is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This power MOSFET is designed for high-efficiency
SKW30N60 Datasheet, Spec and Replacement, IGBT Equivalent
SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short
K30N60 Datasheet (PDF)
No. de pieza: K30N60. Descarga. Tamaño del archivo: 324Kbytes. Page: 13 Pages. Descripción Electrónicos: Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode.
K30N60 Datasheet PDF
• Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
K30N60 Datasheet (PDF)
Description: Fast IGBT in NPT-technology with soft, fast recovery anti-parallel
Datasheet Archive: K30N60 datasheets
View results and find K30N60 datasheets and circuit and application notes in pdf format.